学术探索
学术期刊
新闻热点
数据分析
智能评审

MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：32
作者：
CANALI, C
FORZAN, C
NEVIANI, A
VENDRAME, L
ZANONI, E
HAMM, RA
MALIK, RJ
CAPASSO, F
CHANDRASEKHAR, S
机构：
[1] UNIV PADUA,DIPARTIMENTO ELETTR & INFORMAT,I-35131 PADUA,ITALY
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期
关键词：
D O I：
10.1063/1.113583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The behavior of the electron impact-ionization coefficient αn in In0.53Ga0.47As is measured with unprecedented sensitivity down to very low electric fields. The data are derived from measurements of the multiplication coefficient M-1 in suitably designed heterojunction bipolar transistors. Previously available data are extended by two orders of magnitude in the low field domain, down to αn≈1cm-1. The experimental behavior of αn at fields below 200 kV/cm is in agreement with the theoretical prediction of a weak field dependence of αn at low electric fields.© 1995 American Institute of Physics.
引用
收藏
页码：1095 / 1097
页数：3
相关论文
共 17 条
[1]   DOUBLY STRAINED IN0.41AL0.59AS/N+-IN0.65GA0.35 AS HFET WITH HIGH BREAKDOWN VOLTAGE [J].
BAHL, SR ;
BENNETT, BR ;
DELALAMO, JA .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (01) :22-24
[2]   THRESHOLDS OF IMPACT IONIZATION IN SEMICONDUCTORS [J].
BUDE, J ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3554-3561
[3]   MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
CANALI, C ;
CAPASSO, F ;
MALIK, R ;
NEVIANI, A ;
PAVAN, P ;
TEDESCO, C ;
ZANONI, E .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :354-356
[4]  
CHAU HF, 1993, IEDM, P783
[5]  
CHEN YK, 1989, IEEE ELECTRON DEVICE, V10, P167
[6]  
Feygenson A., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P75, DOI 10.1109/IEDM.1992.307312
[7]  
Hafizi M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P791, DOI 10.1109/IEDM.1993.347195
[8]   COLLECTOR BASE JUNCTION AVALANCHE EFFECTS IN ADVANCED DOUBLE-POLY SELF-ALIGNED BIPOLAR-TRANSISTORS [J].
LU, PF ;
CHEN, TC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1182-1188
[9]   IMPACT IONIZATION IN SILICON - A REVIEW AND UPDATE [J].
MAES, W ;
DEMEYER, K ;
VANOVERSTRAETEN, R .
SOLID-STATE ELECTRONICS, 1990, 33 (06) :705-718
[10]   TEMPERATURE-DEPENDENCE OF COMMON-EMITTER-I-V AND COLLECTOR BREAKDOWN VOLTAGE CHARACTERISTICS IN ALGAAS/GAAS AND ALINAS/GAINAS HBTS GROWN BY MBE [J].
MALIK, RJ ;
CHAND, N ;
NAGLE, J ;
RYAN, RW ;
ALAVI, K ;
CHO, AY .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (11) :557-559
12