ELECTRICAL STUDIES OF CHARGE BUILDUP AND PHONON-ASSISTED TUNNELING IN DOUBLE-BARRIER MATERIALS WITH VERY THICK SPACER LAYERS

被引：10

作者：

GOODINGS, CJ ^{[1
]}

MIZUTA, H ^{[1
]}

CLEAVER, JRA ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,ADV DEVICES RES DEPT,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.356295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double barrier heterostructure materials containing very thick, low-doped layers adjacent to the barriers have been studied. In particular, charge build-up in the quantum well has been investigated along with the effects on this of a magnetic field perpendicular to the barriers. Phonon-assisted tunneling has also been observed from both localized and delocalized states in the emitter.

引用

页码：2291 / 2293

页数：3

共 13 条

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