MOLECULAR-DYNAMICS SIMULATION OF LOW-ENERGY BEAM DEPOSITION OF SILICON

被引:13
作者
DODSON, BW
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期
关键词
D O I
10.1116/1.583622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1393 / 1398
页数:6
相关论文
共 12 条
[1]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[2]   DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON [J].
DODSON, BW .
PHYSICAL REVIEW B, 1987, 35 (06) :2795-2798
[3]  
ERPENBECK JJ, 1977, STATISTICAL MECHAN B, pCH1
[4]  
FELDMAN LC, 1982, MATERIALS ANAL ION C
[5]  
HERBOTS N, 1986, SEMICONDUCTOR BASED
[6]  
KUSHICK J, 1977, STATISTICAL MECHAN B, pCH2
[7]  
MARWICK AD, 1972, RADIAT EFF, V15, P195
[8]   COMPUTER SIMULATION STUDIES OF LIQUID STATE [J].
SCHOFIELD, P .
COMPUTER PHYSICS COMMUNICATIONS, 1973, 5 (01) :17-23
[9]   SURFACE CHANNELING [J].
SIZMANN, R ;
VARELAS, C .
NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :633-638
[10]   COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].
STILLINGER, FH ;
WEBER, TA .
PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271