MOLECULAR-DYNAMICS SIMULATION OF LOW-ENERGY BEAM DEPOSITION OF SILICON

被引：13

作者：

DODSON, BW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1393 / 1398

页数：6

共 12 条

[1] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].

BISWAS, R ;

HAMANN, DR .

[2] DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON [J].

DODSON, BW .

PHYSICAL REVIEW B, 1987, 35 (06) :2795-2798

[3]

ERPENBECK JJ, 1977, STATISTICAL MECHAN B, pCH1

[4]

FELDMAN LC, 1982, MATERIALS ANAL ION C

[5]

HERBOTS N, 1986, SEMICONDUCTOR BASED

[6]

KUSHICK J, 1977, STATISTICAL MECHAN B, pCH2

[7]

MARWICK AD, 1972, RADIAT EFF, V15, P195

[8] COMPUTER SIMULATION STUDIES OF LIQUID STATE [J].

SCHOFIELD, P .

[9] SURFACE CHANNELING [J].

SIZMANN, R ;

VARELAS, C .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :633-638

[10] COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].

STILLINGER, FH ;

WEBER, TA .

PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271