EFFECTS OF HYDROSTATIC-PRESSURE ON THE PHOTOLUMINESCENCE OF POROUS SILICON

被引：8

作者：

CHEONG, HM

WICKBOLDT, P

PANG, D

CHEN, JH

PAUL, W

机构：

[1] BOSTON COLL, DEPT PHYS, CHESTNUT HILL, MA 02167 USA

[2] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA

[3] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.52.R11577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the room-temperature photoluminescence (PL) of free-standing porous silicon films under hydrostatic pressures up to 60 kbar. The pressure dependence of the PL for two films collected from the same porous silicon wafer is very different, depending on whether the pressure medium used is either helium or the standard 4:1 methanol:ethanol mixture. This result is not compatible with the standard quantum confinement model of the PL in porous silicon, which claims that the PL occurs between the confined electron and hole states in the core silicon region.

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页码：11577 / 11579

页数：3

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