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AN ANALYTICAL METHOD FOR DETERMINING INTRINSIC DRAIN SOURCE RESISTANCE OF LIGHTLY DOPED DRAIN (LDD) DEVICES
被引:14
作者
:
DUVVURY, C
论文数:
0
引用数:
0
h-index:
0
DUVVURY, C
BAGLEE, D
论文数:
0
引用数:
0
h-index:
0
BAGLEE, D
DUANE, M
论文数:
0
引用数:
0
h-index:
0
DUANE, M
HYSLOP, A
论文数:
0
引用数:
0
h-index:
0
HYSLOP, A
SMAYLING, M
论文数:
0
引用数:
0
h-index:
0
SMAYLING, M
MAEKAWA, M
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, M
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1984年
/ 27卷
/ 01期
关键词
:
D O I
:
10.1016/0038-1101(84)90097-2
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:89 / 96
页数:8
相关论文
共 5 条
[1]
DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
论文数:
0
引用数:
0
h-index:
0
OGURA, S
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
TSANG, PJ
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
WALKER, WW
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
CRITCHLOW, DL
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
SHEPARD, JF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
: 1359
-
1367
[2]
SAITO K, 1978, DENSHI TSUSHIN R APR, P220
[3]
EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
论文数:
0
引用数:
0
h-index:
0
SUCIU, PI
JOHNSTON, RL
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, RL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
: 1846
-
1848
[4]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[5]
YANG P, 1982, IEEE T COMPUT AID D, V1, P169
←
1
→
共 5 条
[1]
DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
论文数:
0
引用数:
0
h-index:
0
OGURA, S
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
TSANG, PJ
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
WALKER, WW
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
CRITCHLOW, DL
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
SHEPARD, JF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
: 1359
-
1367
[2]
SAITO K, 1978, DENSHI TSUSHIN R APR, P220
[3]
EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
论文数:
0
引用数:
0
h-index:
0
SUCIU, PI
JOHNSTON, RL
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, RL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
: 1846
-
1848
[4]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[5]
YANG P, 1982, IEEE T COMPUT AID D, V1, P169
←
1
→