METAL CONTACTS TO SEMICONDUCTORS, INDIUM-PHOSPHIDE AND CADMIUM TELLURIDE

被引:9
作者
WILLIAMS, RH
DHARMADASA, IM
PATTERSON, MH
MAANI, C
FORSYTH, NM
机构
关键词
D O I
10.1016/0039-6028(86)90862-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:323 / 335
页数:13
相关论文
共 49 条
[1]   ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426
[2]   SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J].
AMITH, A ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1344-1352
[3]   INTERFACE STATES AT GA-GAAS INTERFACE [J].
BACHRACH, RZ ;
BIANCONI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[6]   ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :661-666
[7]  
BRUCKER CF, 1981, J VACUUM SCI TECHNOL, V18, P617
[8]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156
[9]  
DUKE CB, J VACUUM SCI TECHNOL
[10]  
EVANS AS, UNPUB