AMORPHOUS-CRYSTALLINE TRANSITION IN GERMANIUM FILMS

被引：20

作者：

JOHANNESSEN, JS ^{[1
]}

机构：

[1] UNIV TRONDHEIM,NORWEGIAN INST TECHNOL,ELECTR RES LAB,TRONDHEIM,NORWAY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：571 / 577

页数：7

共 17 条

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[3] HAMMER E, 1967, THESIS NORWEGIAN I T
[4] HOPPING CONDUCTION IN AMORPHOUS SOLIDS
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[J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (192): : 1307 - &
[5] THICKNESS DEPENDENCE OF ELECTRICAL TRANSPORT PROPERTIES OF GERMANIUM FILMS
JOHANNESSEN, JS
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (02): : 469 - +
[6] ELASTORESISTANCE IN GERMANIUM FILMS
JOHANNESSEN, JS
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 16 (02): : 447 - 458
[7] GALVANOMAGNETIC EFFECTS IN P-TYPE GERMANIUM
JOHANNESSEN, JS
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 251 - +
[8] JOHANNESSEN JS, 1970, AE140 ELAB REP
[9] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION
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SNEED, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3665 - +
[10] AMORPHOUS-CRYSTALLINE TRANSITION IN GE FILMS BY PHOTOEMISSION
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WILLIS, RF
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[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (10) : 1007 - 1011