SURFACE MICROMACHINED PRESSURE TRANSDUCERS

被引:86
作者
GUCKEL, H
机构
[1] Wisconsin Center for Applied Microelectronics, Department of Electrical and Computer Engineering, University of Wisconsin, Madison
关键词
D O I
10.1016/0924-4247(91)85021-F
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Typical IC processing is fundamentally two dimensional; sensors are three-dimensional structures. In surface micromachining, two-dimensional IC processing is extended to sensor structures by the addition of one or more sacrificial layers which are removed by lateral etching. The resulting sensor structures involve the substrate and one or more deposited films which form the intended micromechanical component. The concepts of this type of sensor manufacturing are readily demonstrated by considering absolute pressure transducers in some detail. Absolute pressure transducers involve a vacuum-sealed cavity and a deformation sensing technique. The cavity is formed from the substrate and a low-pressure chemical vapor deposited polycrystalline silicon film. The mechanical properties of this film must be controlled well enough to allow the device to be designed. This implies morphological control during processing. Optimized films which do exhibit controlled compressive or tensile strains exclude oxygen or nitrogen and are therefore not modified by extended hydrofluoric acid etches. Their mechanical behavior is monitored by micromechanical test structures which measure Euler buckling and thereby determine the value of the built-in strain. The cavity vacuum is established by reactive sealing. Long-term vacuum integrity is achieved by a low-stress silicon nitride barrier which also acts as a dielectric isolation barrier. Sensing is accomplished via deposited polysilicon resistors. These devices behave like metal resistors in terms of their temperature coefficient of resistance and noise figure. Their piezoresistive behavior is larger than that of typical metal film structures and smaller than that of single-crystal resistors. Pressure sensors with four diaphragms, two active and two inactive, have been constructed and optimized towards manufacturability. The measured performance is excellent and agrees with the predictions of the design algorithm.
引用
收藏
页码:133 / 146
页数:14
相关论文
共 39 条
  • [1] BRYZEK J, 1985, 3RD P INT C SOL STAT, P168
  • [2] BURNS DW, 1988, THESIS U WISCONSIN M
  • [3] LONGITUDINAL AND TRANSVERSE GAUGE FACTORS OF POLYCRYSTALLINE STRAIN-GAUGES
    DOSSEL, O
    [J]. SENSORS AND ACTUATORS, 1984, 6 (03): : 169 - 179
  • [4] ESACHI M, 1982, IEEE T ELECTRON DEV, V29, P57
  • [5] BIOMEDICAL PRESSURE SENSOR USING BURIED PIEZORESISTORS
    ESASHI, M
    KOMATSU, H
    MATSUO, T
    [J]. SENSORS AND ACTUATORS, 1983, 4 (04): : 537 - 544
  • [6] MINIATURE CAPACITIVE PRESSURE TRANSDUCERS
    FUNG, CD
    KO, WH
    [J]. SENSORS AND ACTUATORS, 1982, 2 (03): : 321 - 326
  • [7] FINE-GRAINED POLYSILICON FILMS WITH BUILT-IN TENSILE STRAIN
    GUCKEL, H
    BURNS, DW
    VISSER, CCG
    TILMANS, HAC
    DEROO, D
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (06) : 800 - 801
  • [8] THE APPLICATION OF FINE-GRAINED, TENSILE POLYSILICON TO MECHANICALLY RESONANT TRANSDUCERS
    GUCKEL, H
    SNIEGOWSKI, JJ
    CHRISTENSON, TR
    RAISSI, F
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) : 346 - 351
  • [9] A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON
    GUCKEL, H
    RANDAZZO, T
    BURNS, DW
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1671 - 1675
  • [10] GUCKEL H, 1986, JUN IEEE SOL STAT WO