DESIGN, FABRICATION, AND ANALYSIS OF 17-18-PERCENT EFFICIENT SURFACE-PASSIVATED SILICON SOLAR-CELLS

被引:61
作者
ROHATGI, A
RAICHOUDHURY, P
机构
关键词
D O I
10.1109/T-ED.1984.21574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:596 / 601
页数:6
相关论文
共 22 条
[1]   PRACTICAL LIMITING EFFICIENCIES FOR CRYSTALLINE SILICON SOLAR-CELLS [J].
AMICK, JA ;
GHOSH, AK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :160-164
[2]   DIFFUSION LENGTH DETERMINATION IN P-N-JUNCTION DIODES AND SOLAR-CELLS [J].
ARORA, ND ;
CHAMBERLAIN, SG ;
ROULSTON, DJ .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :325-327
[3]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[4]   PHYSICAL OPERATION OF BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].
FOSSUM, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :322-325
[5]   IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA ;
SHIBIB, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1294-1298
[6]   HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].
FOSSUM, JG ;
BURGESS, EL .
APPLIED PHYSICS LETTERS, 1978, 33 (03) :238-240
[7]   655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].
GODFREY, RB ;
GREEN, MA .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :790-793
[8]  
GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40
[9]  
Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388
[10]  
Gunn J. B., 1958, J ELECTRON CONTR, V4, P17