STACKING-FAULT ASYMMETRY IN EPITAXIAL-FILMS OF MOCVD ZNSE/GAAS(001)

Epitaxial films of ZnSe/GaAs(001) contain high densities of stacking faults (almost-equal-to 10(10) cm-2) which show a marked asymmetry in density parallel to orthogonal [110] and [110BAR] directions. Addition of dopants such as Al and In during film growth affects the defect distribution resulting in both a systematic reduction in stacking fault density with increasing dopant concentration and the formation of misfit dislocations. It is postulated that the observed stacking fault asymmetry arises due to variations in partial dislocation mobilities due to the addition of dopants.