THE THERMAL-STABILITY OF SIGE FILMS DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION

被引：36

作者：

STIFFLER, SR

COMFORT, JH

STANIS, CL

HARAME, DL

DEFRESART, E

MEYERSON, BS

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.349551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition was studied. Various Ge compositional profiles, including boxes, trapezoids, and triangles were examined. Planar-view transmission electron microscopy was performed following growth and after furnace annealing at 950-degrees-C for 30 min to determine the presence and density of misfit dislocations. All profiles showed very similar stability behavior when expressed in terms of the total thickness of the film, h(eff), and the effective strain present in the layer, epsilon-eff. Following the anneal, misfit dislocations were observed when h(eff) exceeded the critical thickness, as defined by Mattews and Blakeslee [J. Cryst. Growth 27, 118 (1974)], by a factor of approximately 2.

引用

页码：1416 / 1420

页数：5

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