LAALO3 THIN-FILMS DEPOSITED ON SILICON AND SAPPHIRE AS BUFFER LAYERS FOR YBA2CU3O7-X

被引：19

作者：

SANDU, V

JAKLOVSZKY, J

MIU, D

DRAGULINESCU, D

GRIGORIU, C

BUNESCU, MC

机构：

[1] INST PHYS & TECHNOL RADIAT DEVICES,BUCHAREST,ROMANIA

[2] METAV SA,BUCHAREST,ROMANIA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1994年 / 13卷 / 16期

关键词：

D O I：

10.1007/BF00241019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1222 / 1225

页数：4

共 20 条

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[13]

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[14]

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RAO, RR .

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[17]

SIMON R, 1988, APPL PHYS LETT, V5, P2677

[18] INSITU PROCESSING OF EPITAXIAL Y-BA-CU-O HIGH-TC SUPERCONDUCTING FILMS ON (100) SRTIO3 AND (100) YS-ZRO2 SUBSTRATES AT 500-650-DEGREES-C [J].

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[19] SUPERCONDUCTING Y1BA2CU3O7-X FILMS ON SI [J].

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[20]

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