CONSTANT-TEMPERATURE METHOD FOR EVALUATING DEEP-LEVEL PARAMETERS IN SCHOTTKY-BARRIER TSC MEASUREMENTS

被引：9

作者：

SMITH, BL ^{[1
]}

CARTER, MA ^{[1
]}

机构：

[1] FERRANTI LTD,OLDHAM OL9 8NP,LANCASHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1975年 / 8卷 / 03期

关键词：

D O I：

10.1088/0022-3727/8/3/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：254 / 261

页数：8

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[7] DETERMINATION OF DEEP CENTERS IN SILICON BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS
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[8] BACKGROUND ENERGY-LEVEL SPECTROSCOPY IN GAP USING THERMAL RELEASE OF TRAPPED SPACE-CHARGE IN SCHOTTKY BARRIERS
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