PHOTOIONIZATION OF ELECTRONS AND HOLES AT OXYGEN DONORS IN GALLIUM-PHOSPHIDE

被引：15

作者：

BRAUN, S ^{[1
]}

GRIMMEIS.HG ^{[1
]}

机构：

[1] LUND INST TECHNOL,DEPT SOLID STATE PHYS,LUND 7,SWEDEN

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 07期

关键词：

D O I：

10.1016/0038-1098(73)90307-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：657 / 660

页数：4

共 12 条

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[3] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J].

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GRIMMEISS, HG .

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[4]

BRAUN S, IN PRESS

[5] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH ;

FROSCH, CJ .

PHYSICAL REVIEW, 1968, 168 (03) :812-&

[6] RADIATIVE AND NONRADIATIVE RECOMBINATION AT NEUTRAL OXYGEN IN P TYPE GAP [J].

DISHMAN, JM .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2588-+

[7]

HALL RN, 1952, PHYS REV, V86, P600

[8] PHOTOCAPACITANCE STUDIES OF DEEP-DOUBLE ELECTRON-TRAP OXYGEN IN GALLIUM-PHOSPHIDE [J].

KUKIMOTO, H ;

HENRY, CH ;

MILLER, GL .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :251-&

[9] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

[10]

MORGAN TN, 1966, RC1612 IBM RES PAP

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