HEAT-TRANSFER IN SILICON CZOCHRALSKI CRYSTAL-GROWTH

被引:40
作者
WILLIAMS, G [1 ]
REUSSER, RE [1 ]
机构
[1] WESTERN ELECT CO INC,ALLENTOWN WORKS,ALLENTOWN,PA 18103
关键词
D O I
10.1016/0022-0248(83)90328-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:448 / 460
页数:13
相关论文
共 17 条
[11]   INFLUENCE OF CRYSTAL DIMENSIONS ON INTERFACIAL TEMPERATURE GRADIENT [J].
KUO, VHS ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1972, 12 (03) :191-&
[13]  
NEUBERGER M, 1969, AD698342
[14]   CZOCHRALSKI SILICON PULL RATE LIMITS [J].
REA, SN .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :267-274
[15]  
WILCOX WR, 1966, J HEAT TRANSFER C, V88, P45
[16]  
Wolf H. F, 1969, SILICON SEMICONDUCTO
[17]  
1961, HDB THERMOPHYSICAL P