ROLE OF RADIATIVE AND NONRADIATIVE PROCESSES ON THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED 1.5 MU-M INGAAS(P) QUANTUM-WELL LASERS

By measuring the spontaneous emission from strained and unstrained 1.5 mu m InGaAs quantum well lasers as a function of temperature we deduce the temperature dependence of the radiative current density at threshold corresponds to a characteristic temperature T-0 approximate to 300 K, close to that expected from theory, whereas T-0 of the threshold current is around 60 K. We conclude from our analysis that the large temperature dependence of long wavelength lasers is due to Auger recombination. (C) 1995 American Institute of Physics.