MULTIPLE CONNECTED QUANTIZED RESISTANCE REGIONS

被引：10

作者：

SYPHERS, DA ^{[1
]}

FANG, FF ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0039-6028(84)90309-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：208 / 214

页数：7

共 10 条

[1] QUANTIZED MAGNETORESISTANCE IN TWO-DIMENSIONAL ELECTRON-SYSTEMS
FANG, FF
STILES, PJ
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6487 - 6488
[2] FANG FF, UNPUB
[3] LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632
[4] QUANTIZED HALL-EFFECT AT LOW-TEMPERATURES
PAALANEN, MA
TSUI, DC
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5566 - 5569
[5] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262
[6] QUANTIZED HALL RESISTANCE AND THE MEASUREMENT OF THE FINE-STRUCTURE CONSTANT
PRANGE, RE
[J]. PHYSICAL REVIEW B, 1981, 23 (09): : 4802 - 4805
[7] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES
TSUI, DC
GOSSARD, AC
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 550 - 552
[8] DETERMINATION OF THE FINE-STRUCTURE CONSTANT USING GAAS-ALXGA1-XAS HETEROSTRUCTURES
TSUI, DC
GOSSARD, AC
FIELD, BF
CAGE, ME
DZIUBA, RF
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (01) : 3 - 6
[9] VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494
[10] QUANTIZED HALL RESISTIVITY IN SI-MOSFETS MEASURED AT LIQ - HE-3 TEMPERATURES
YOSHIHIRO, K
KINOSHITA, J
INAGAKI, K
YAMANOUCHI, C
MORIYAMA, J
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (01) : 5 - 6