AUGER-ELECTRON SPECTROSCOPY SPUTTER DEPTH PROFILES ON ALXGA1-XAS PROTECTED BY AS AND GAAS ULTRATHIN LAYERS

被引：6

作者：

ETIENNE, P

ALNOT, P

ROCHETTE, JF

MASSIES, J

机构：

[1] THOMSON SEMICOND,DIV ARSENIURE GALLIUM,F-91401 ORSAY,FRANCE

[2] CNRS,PHYS SOLIDE ENERGIE SOLAIRE LAB,VALBONNE,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1301 / 1305

页数：5

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