INFLUENCE OF ANNEALING DURING GROWTH ON DEFECT FORMATION IN CZOCHRALSKI SILICON

被引：15

作者：

NAKANISHI, H

KOHDA, H

HOSHIKAWA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90282-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：80 / 84

页数：5

共 12 条

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[5] INFLUENCE OF ANNEALING DURING GROWTH ON DEFECTS IN CZOCHRALSKI SILICON [J].

NAKANISHI, H ;

KOHDA, H ;

HIRATA, H ;

HOSHIKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :561-562

[6]

OSAKA J, 1980, APPL PHYS LETT, V36, P288, DOI 10.1063/1.91464

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Pearce C.W., 1977, SEMICONDUCTOR SILICO, P606

[8]

TAKAOKA H, 1979, JAPAN J APPL PHY S18, V18, P179

[9] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

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[10]

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