GAXIN1-XP-GAYAL1-YAS HETEROJUNCTION CLOSE-CONFINEMENT INJECTION LASER

被引：11

作者：

SCHUL, G ^{[1
]}

MISCHEL, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITER TECH,AACHEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 07期

关键词：

D O I：

10.1063/1.88190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：394 / 395

页数：2

共 7 条

[1] IMPROVED TECHNIQUE FOR PREPARATION OF GAXAL1-XAS ELECTROLUMINESCENT DIODES [J].

BENEKING, H ;

SCHUL, G ;

MISCHEL, P .

ELECTRONICS LETTERS, 1972, 8 (01) :16-&

[2]

BENEKING H, 1974, 5 P INT C GAAS REL C

[3] LIQUID-PHASE EPITAXIAL (LPE) GROWN JUNCTION IN1-XGAXP (X - 0.63) LASER OF WAVELENGTH LAMBDAL - 5900 A (2.10 EV, 77 DEGREES K) [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC ;

COLEMAN, JJ ;

GROVES, WO ;

KEUNE, DL .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :352-354

[4] IN1-XGAXP P-N JUNCTION LASERS [J].

MACKSEY, HM ;

HOLONYAK, N ;

SCIFRES, DR ;

DUPUIS, RD ;

ZACK, GW .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :271-&

[5] SUCCESSFUL LIQUID-PHASE EPITAXIAL-GROWTH AND OPTICALLY PUMPED LASER OPERATION OF IN0.5GA0.5P-GA0.4AL0.6AS DOUBLE-HETEROSTRUCTURE MATERIAL [J].

MILLER, BI ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :216-218

[6] ORANGE LASER EMISSION AND BRIGHT ELECTROLUMINESCENCE FROM IN1-XGAXP VAPOR-GROWN P-N-JUNCTIONS [J].

NUESE, CJ ;

SIGAI, AG ;

GANNON, JJ .

APPLIED PHYSICS LETTERS, 1972, 20 (11) :431-&

[7] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+

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