IMPROVED TECHNIQUE FOR PREPARATION OF GAXAL1-XAS ELECTROLUMINESCENT DIODES

被引：6

作者：

BENEKING, H

SCHUL, G

MISCHEL, P

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 01期

关键词：

D O I：

10.1049/el:19720012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：16 / &

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[1] EFFICIENT ELECTROLUMINESCENCE FROM ZINC-DIFFUSED GA1-XALXAS DIODES AT 25 DEGREES C [J].

DIERSCHK.EG ;

STONE, LE ;

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[2] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

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[3] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J].

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[4] INFECTION ELECTROLUMINESCENCE IN (ALKAPPAGA1-KAPPA)AS DIODES OF GRADED ENERGY GAP [J].

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[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J].

MANASEVIT, HM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :647-+

[6] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY [J].

RUPPRECHT, H ;

WOODALL, JM ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :81-+

[7] EFFECT OF PARTIAL DISSOLUTION DURING LPE GROWTH OF ALXGA1-XAS ON EFFICIENCY OF DIFFUSED LIGHT-EMITTING DIODES [J].

SHIH, KK ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1631-&