PHOTOTHERMAL DISPLACEMENT TECHNIQUE - A METHOD TO DETERMINE THE VARIATION OF THERMAL-CONDUCTIVITY VERSUS TEMPERATURE IN SILICON

被引:4
作者
BENEDETTO, G [1 ]
SPAGNOLO, R [1 ]
BOARINO, L [1 ]
机构
[1] UNIV TURIN,CONSORZIO INFM,UNITA TORINO,I-10125 TURIN,ITALY
关键词
D O I
10.1063/1.1143966
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A method to determine the variation of thermal conductivity as a function of temperature in silicon is described. The method is based on the application of a photothermal displacement technique in the temperature range 30-300 K. The results obtained on samples with different types and dopant concentrations are shown to be in good agreement with those reported in the literature.
引用
收藏
页码:2229 / 2232
页数:4
相关论文
共 8 条
[1]   TEMPERATURE-DEPENDENCE OF PHOTOTHERMAL DISPLACEMENT SIGNAL IN SILICON [J].
AMATO, G ;
BENEDETTO, G ;
BOARINO, L ;
SPAGNOLO, R .
JOURNAL OF MODERN OPTICS, 1992, 39 (09) :1803-1809
[2]   THERMAL-CONDUCTIVITY AND INTERFACE THERMAL-RESISTANCE OF SI FILM ON SI SUBSTRATE DETERMINED BY PHOTOTHERMAL DISPLACEMENT INTERFEROMETRY [J].
KUO, BSW ;
LI, JCM ;
SCHMID, AW .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (03) :289-296
[3]   PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY - AN OPTICAL PROBE FOR SOLIDS AND SURFACES [J].
OLMSTEAD, MA ;
AMER, NM ;
KOHN, S ;
FOURNIER, D ;
BOCCARA, AC .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (03) :141-154
[4]   TEMPERATURE-DEPENDENCE OF THE SI AND GE (111)2X1 SURFACE-STATE OPTICAL-ABSORPTION [J].
OLMSTEAD, MA ;
AMER, NM .
PHYSICAL REVIEW B, 1986, 33 (04) :2564-2573
[5]  
TOULOUKIAN YS, 1970, THERMOPHYSICAL PROPE, V1, P326
[6]   PHOTOTHERMAL SURFACE DEFORMATION TECHNIQUE - A GOAL FOR NONDESTRUCTIVE EVALUATION IN THIN-FILM OPTICS [J].
WELSCH, E .
JOURNAL OF MODERN OPTICS, 1991, 38 (11) :2159-2176
[7]   GENERATION OF ELASTIC WAVES BY TRANSIENT SURFACE HEATING [J].
WHITE, RM .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3559-&
[8]  
1988, EMIS DATERVIEWS SERI, V4