HIGH-PURITY INP GROWN BY HYDRIDE VPE TECHNIQUE WITH IMPURITY GETTERING BY INDIUM SOURCE AND OXYGEN

被引：12

作者：

USUI, A

WATANABE, H

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 05期

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D O I：

10.1007/BF02655301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：891 / 902

页数：12

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