PHOTO HALL-EFFECT OF CINNABAR

被引：7

作者：

BUTTI, C

RAYMOND, A

BOMBRE, F

机构：

[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUDES ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

[2] CTR UNIV PERPIGNAN,SPECT INFRA ROUGE LAB,F-66025 PEPIGNAN,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：133 / 137

页数：5

共 18 条

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[3]

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[4]

BUTTI C, 1974, CR ACAD SCI D NAT, V279, P623

[5] PHOTO-HALL EFFECT IN ANTHRACENE [J].

DRESNER, J .

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[6] APPARATUS FOR MEASUREMENT OF GALVANOMAGNETIC EFFECTS IN HIGH RESISTANCE SEMICONDUCTORS [J].

FISCHER, G ;

GREIG, D ;

MOOSER, E .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (07) :842-&

[7]

FIVAZ R, 1963, HELV PHYS ACTA, V36, P1052

[8] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J].

HEMENGER, PM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :698-700

[9]

LANGLOIS H, 1973, THESIS PARIS

[10]

LECOCQMAYER MC, 1975, THESIS PARIS

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