ESCA AND PHOTOELECTROCHEMICAL STUDIES OF P-N-JUNCTION SILICON ELECTRODES PROTECTED BY PLATINUM DEPOSITION FOR USE IN SOLAR-ENERGY CONVERSION

被引:31
作者
NAKATO, Y [1 ]
HIRAMOTO, M [1 ]
IWAKABE, Y [1 ]
TSUBOMURA, H [1 ]
机构
[1] OSAKA UNIV,DEPT CHEM,TOYONAKA,OSAKA 560,JAPAN
关键词
D O I
10.1149/1.2113832
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
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页码:330 / 334
页数:5
相关论文
共 39 条
[1]   USE OF CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES IN AQUEOUS-MEDIA - PHOTO-OXIDATION OF IODIDE, HEXACYANOIRON(II), AND HEXAAMMINERUTHENIUM(II) AT FERROCENE-DERIVATIZED PHOTOANODES [J].
BOCARSLY, AB ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (10) :3390-3398
[2]   CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J].
BOLTS, JM ;
BOCARSLY, AB ;
PALAZZOTTO, MC ;
WALTON, EG ;
LEWIS, NS ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (06) :1378-1385
[3]   METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].
CHEUNG, NW ;
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
MAYER, JW ;
ULLRICH, BM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923
[4]   PLATINUM SILICIDE FORMATION UNDER ULTRAHIGH-VACUUM AND CONTROLLED IMPURITY AMBIENTS [J].
CRIDER, CA ;
POATE, JM ;
ROWE, JE ;
SHENG, TT .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2860-2868
[5]   PLATINUM SILICIDE FORMATION - ELECTRON-SPECTROSCOPY OF PLATINUM-PLATINUM SILICIDE INTERFACE [J].
DANYLUK, S ;
MCGUIRE, GE .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5141-5144
[6]  
DECKER F, 1982, ISRAEL J CHEM, V22, P195
[7]   IMPROVEMENT OF PHOTO-ELECTROCHEMICAL HYDROGEN GENERATION BY SURFACE MODIFICATION OF P-TYPE SILICON SEMICONDUCTOR PHOTO-CATHODES [J].
DOMINEY, RN ;
LEWIS, NS ;
BRUCE, JA ;
BOOKBINDER, DC ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (02) :467-482
[8]   SEMICONDUCTOR ELECTRODES .39. TECHNIQUES FOR STABILIZATION OF N-SILICON ELECTRODES IN AQUEOUS-SOLUTION PHOTOELECTROCHEMICAL CELLS [J].
FAN, FRF ;
WHEELER, BL ;
BARD, AJ ;
NOUFI, RN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2042-2045
[9]   SEMICONDUCTOR ELECTRODES .46. STABILIZATION OF N-SILICON ELECTRODES IN AQUEOUS-SOLUTION PHOTO-ELECTROCHEMICAL CELLS BY FORMATION OF PLATINUM SILICIDE LAYERS [J].
FAN, FRF ;
HOPE, GA ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1647-1649
[10]   SEMICONDUCTOR ELECTRODES .48. PHOTO-OXIDATION OF HALIDES AND WATER ON N-SILICON PROTECTED WITH SILICIDE LAYERS [J].
FAN, FRF ;
KEIL, RG ;
BARD, AJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (02) :220-224