A DESIGN METHOD FOR VARIABLE-CAPACITANCE DIODES WITH AN M-TH POWER CHARACTERISTIC FOR A WIDE VOLTAGE RANGE

被引：7

作者：

SUKEGAWA, T

SAKURAI, T

NISHIZAWA, J

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：988 / +

页数：1

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[6] SILICON ALLOY-DIFFUSED VARIABLE CAPACITANCE DIODE [J].

SUKEGAWA, T ;

FUJIKAWA, K ;

NISHIZAWA, J .

[7]

SUKEGAWA T, 1963, T TRANSISTORS IECE J, V2, P1