EVALUATION OF LASRGAO4 AS A SUBSTRATE FOR YBA2CU3O7-DELTA

被引：26

作者：

MCCONNELL, AW ^{[1
]}

HUGHES, RA ^{[1
]}

DABKOWSKI, A ^{[1
]}

DABKOWSKA, HA ^{[1
]}

PRESTON, JS ^{[1
]}

GREEDAN, JE ^{[1
]}

TIMUSK, T ^{[1
]}

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

PHYSICA C | 1994年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(94)90318-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a comparison study between YBa2Cu3O7-delta thin films deposited on LaSrGaO4 and LaAlO3 substrates. The LaSrGaO4 crystals were grown, cut and polished in-house while the LaAlO3 substrates were prepared commercially. The deposited films were characterized by a variety of techniques including DC resistivity, critical current density, X-ray diffraction including rocking-curve analysis and scanning electron microscopy. Growth temperatures above 780-degrees-C on both substrates yielded highly oriented c-axis material with excellent transport properties. Because LaSrGaO4 has the advantage of being untwinned, a desirable property for microwave-device applications, we conclude that it has much promise as a potential substitute for LaAlO3.

引用

页码：7 / 12

页数：6

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