ELECTRICAL CHARACTERISTICS OF NEUTRON-IRRADIATION INDUCED DEFECTS IN N-GAAS

被引：19

作者：

AURET, FD

WILSON, A

GOODMAN, SA

MYBURG, G

MEYER, WE

机构：

[1] Physics Department, University of Pretoria, Pretoria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95577-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Palladium Schottky barrier diodes (SBDs) on epitaxially grown n-GaAs were irradiated with neutrons from a reactor and a p(66)/Be (40) clinical source. From current-voltage (I-V) and capacitance-voltage (C-V) measurements it was found that neutron irradiation caused generation-recombination currents and resulted in a reduction in the free carrier concentrations of the epitaxial layers. A linear relation was found between the irradiation fluence, the free carrier removal and the reverse leakage current of neutron irradiated SBDs. Deep level transient spectroscopy (DLTS) indicated that five electron traps, En1-En5, were introduced during neutron irradiation. These defects are shown to be responsible for the degradation of neutron irradiated SBDs.

引用

页码：387 / 391

页数：5

共 17 条

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