DEEP LEVEL TRANSIENT SPECTROSCOPY OF NEUTRON-IRRADIATED SEMICONDUCTORS

[1] Baliga B. J., 1979, Neutron Transmutation Doping in Semiconductors, P317

[2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[3] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[4] CORBETT JW, 1977, RAD EFFECTS SEMICOND, P1

[5] CORBETT JW, 1966, SOLID STATE PHYSCI S, V7, P128

[6] DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5093 - 5098

[7] DOWNING JJ, 1964, MODULATION SYSTEMS N, P214

[8] ELECTRON TRAPS IN SILICON DOPED BY NEUTRON TRANSMUTATION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (14) : 2043 - &

[9] Jellison G. E. Jr., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P241

[10] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 132 (02): : 648 - &

[1] Baliga B. J., 1979, Neutron Transmutation Doping in Semiconductors, P317

[2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[3] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[4] CORBETT JW, 1977, RAD EFFECTS SEMICOND, P1

[5] CORBETT JW, 1966, SOLID STATE PHYSCI S, V7, P128

[6] DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5093 - 5098

[7] DOWNING JJ, 1964, MODULATION SYSTEMS N, P214

[8] ELECTRON TRAPS IN SILICON DOPED BY NEUTRON TRANSMUTATION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (14) : 2043 - &

[9] Jellison G. E. Jr., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P241

[10] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 132 (02): : 648 - &