ELECTRON TRAPS IN SILICON DOPED BY NEUTRON TRANSMUTATION

被引：17

作者：

GULDBERG, J

机构：

[1] TECH UNIV DENMARK,INST APPL PHYS 3,DK-2800 LYNGBY,DENMARK

[2] TECH UNIV DENMARK,SEMICONDUCTOR TECHNOL,DK-2800 LYNGBY,DENMARK

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 14期

关键词：

D O I：

10.1088/0022-3727/11/14/014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2043 / &

相关论文

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