ULTRAVIOLET PHOTOLUMINESCENCE FROM CUALS2 HETEROEPITAXIAL LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：21

作者：

CHICHIBU, S ^{[1
]}

NAKANISHI, H ^{[1
]}

SHIRAKATA, S ^{[1
]}

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) studies were carried out on CuAlS2 heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain. © 1995 American Institute of Physics.

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页码：3513 / 3515

页数：3

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