THE INFLUENCE OF SURFACE RECONSTRUCTION ON THE INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY

被引：6

作者：

GOSSMANN, HJ

FELDMAN, LC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1065 / 1066

页数：2

共 7 条

[1] THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY
DEJONG, T
DOUMA, WAS
SMIT, L
KORABLEV, VV
SARIS, FW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 888 - 898
[2] FELDMAN LC, 1982, MATERIALS ANAL ION C
[3] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE
GOSSMANN, HJ
FELDMAN, LC
GIBSON, WM
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 294 - 297
[4] GOSSMANN HJ, SURF SCI
[5] GOSSMANN HJ, PHYS REV B
[6] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM
GRONWALD, KD
HENZLER, M
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187
[7] JONA F, 1967, 13TH P SAG ARM MAT R