NEW VARIATIONAL SOLUTION FOR THE LOWEST SUBBAND LEVEL OF THE TWO-DIMENSIONAL ELECTRON-GAS

被引：16

作者：

GRINBERG, AA

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.32.4028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4028 / 4033

页数：6

相关论文

共 18 条

[1] ABRAMOWITZ M, 1964, HDB MATH FUNCTIONS, pCH10
[2] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS
ANDO, T
[J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477
[3] EFFECT OF MAGNETIC FIELD ON ENERGY OF SURFACE BOUND STATES
APPELBAUM, JA
BARAFF, GA
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1235 - +
[4] PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD
APPELBAUM, JA
BARAFF, GA
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1246 - +
[5] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR
BARAFF, GA
APPELBAUM, JA
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +
[6] MANY-BODY CORRELATION-EFFECTS ON THE (110) AND (111) SILICON INVERSION-LAYERS
DASSARMA, S
VINTER, B
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3639 - 3642
[7] TEMPERATURE-DEPENDENT MANY-BODY EFFECTS ON THE ELECTRONIC-PROPERTIES OF SPACE-CHARGE LAYERS
DASSARMA, S
VINTER, B
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6832 - 6835
[8] ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM
DASSARMA, S
VINTER, B
[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 960 - 974
[9] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES
DUKE, CB
[J]. PHYSICAL REVIEW, 1967, 159 (03): : 632 - +
[10] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES
FANG, FF
HOWARD, WE
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &