THE EFFECTS OF DEPOSITION PARAMETERS ON IRON FILMS RF DIODE SPUTTERED IN ARGON-NITROGEN

被引:18
作者
JONES, RE
WILLIAMS, J
STAUD, N
机构
[1] IBM Corporation, General Products Division, San Jose
关键词
D O I
10.1109/20.104409
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Iron-nitrogen films deposited in an argon-N, sputtering gas were characterized as a function of RF diode sputtering parameters and the N 2partial pressure. The magnetic properties of the films were generally soft until they contained about 1 at % nitrogen, which corresponded to an impingement rate ratio of nitrogen to iron of about 400 to l. At that composition Hcand H, increased abruptly. Optimum substrate bias was found to depend on the substrate used. Annealed films exhibited significant decreases in Hcand Hk, and the saturation magnetostriction could be adjusted to near zero by adding nitrogen. Corrosion properties were also improved with added nitrogen. © 1990 IEEE
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页码:1456 / 1458
页数:3
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