GROWTH OF HIGH-QUALITY (100)CDTE FILMS ON (100)GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

BICKNELL, RN ^{[1
]}

GILESTAYLOR, NC ^{[1
]}

YANKA, RW ^{[1
]}

SCHETZINA, JF ^{[1
]}

MAGEE, TJ ^{[1
]}

LEUNG, C ^{[1
]}

KAWAYOSKI, H ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

机构：

[1] ARACOR,SUNNYVALE,CA 94086

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 418

页数：2

共 7 条

[1]

BICKNELL RN, UNPUB APPL PHYS LETT

[2] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J].

CHEUNG, JT ;

KHOSHNEVISAN, M ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :462-464

[3] MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].

CHOW, PP ;

GREENLAW, DK ;

JOHNSON, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563

[4] PHOTO-LUMINESCENCE FROM CDTE SAPPHIRE FILMS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

EDWARDS, ST ;

SCHREINER, AF ;

MYERS, TM ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6785-6786

[5] EFFECT OF SURFACE PREPARATION ON THE 77-K PHOTO-LUMINESCENCE OF CDTE [J].

MYERS, TH ;

SCHETZINA, JF ;

EDWARDS, ST ;

SCHREINER, AF .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4232-4234

[6] GROWTH OF CDTE-FILMS ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY [J].

MYERS, TH ;

LO, Y ;

BICKNELL, RN ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :247-248

[7] MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].

NISHITANI, K ;

OHKATA, R ;

MUROTANI, T .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :619-635

← 1 →