学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
DETECTION OF WATER-RELATED CHARGE IN ELECTRONIC DIELECTRICS
被引:12
作者
:
LIFSHITZ, N
论文数:
0
引用数:
0
h-index:
0
LIFSHITZ, N
SMOLINSKY, G
论文数:
0
引用数:
0
h-index:
0
SMOLINSKY, G
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 55卷
/ 04期
关键词
:
D O I
:
10.1063/1.101570
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:408 / 410
页数:3
相关论文
共 4 条
[1]
AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(02)
:222
-+
[2]
IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
;
SILVERSMITH, DJ
论文数:
0
引用数:
0
h-index:
0
SILVERSMITH, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(06)
:966
-+
[3]
CHARACTERISTICS AND ANALYSIS OF INSTABILITY INDUCED BY SECONDARY SLOW TRAPPING IN SCALED CMOS DEVICES
[J].
NOYORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
NOYORI, M
;
YASUI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
YASUI, J
;
ISHIHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
ISHIHARA, T
;
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
HIGUCHI, H
.
IEEE TRANSACTIONS ON RELIABILITY,
1983,
32
(03)
:323
-330
[4]
SMOLINSKY G, 1989, MATERIALS RES SOC P, V131, P53
←
1
→
共 4 条
[1]
AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(02)
:222
-+
[2]
IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
;
SILVERSMITH, DJ
论文数:
0
引用数:
0
h-index:
0
SILVERSMITH, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(06)
:966
-+
[3]
CHARACTERISTICS AND ANALYSIS OF INSTABILITY INDUCED BY SECONDARY SLOW TRAPPING IN SCALED CMOS DEVICES
[J].
NOYORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
NOYORI, M
;
YASUI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
YASUI, J
;
ISHIHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
ISHIHARA, T
;
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN
HIGUCHI, H
.
IEEE TRANSACTIONS ON RELIABILITY,
1983,
32
(03)
:323
-330
[4]
SMOLINSKY G, 1989, MATERIALS RES SOC P, V131, P53
←
1
→