CHARACTERISTICS AND ANALYSIS OF INSTABILITY INDUCED BY SECONDARY SLOW TRAPPING IN SCALED CMOS DEVICES

被引：6

作者：

NOYORI, M ^{[1
]}

YASUI, J ^{[1
]}

ISHIHARA, T ^{[1
]}

HIGUCHI, H ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP,KYOTO 617,JAPAN

来源：

IEEE TRANSACTIONS ON RELIABILITY | 1983年 / 32卷 / 03期

关键词：

D O I：

10.1109/TR.1983.5221663

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：323 / 330

页数：8

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