PHONON SCATTERINGS OF QUASI TWO-DIMENSIONAL ELECTRON-GAS IN A SINGLE HETEROSTRUCTURE

被引:8
作者
POLONOVSKI, JP
TOMIZAWA, K
机构
[1] ECOLE POLYTECH,F-75230 PARIS 05,FRANCE
[2] MEIJI UNIV,SCH ENGN,KAWASAKI 214,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 12期
关键词
D O I
10.1143/JJAP.24.1611
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1611 / 1618
页数:8
相关论文
共 16 条
[2]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[3]   IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].
HESS, K .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486
[4]   HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES [J].
HIYAMIZU, S ;
MIMURA, T .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :455-463
[5]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[6]   PARALLEL ELECTRON-TRANSPORT AND FIELD EFFECTS OF ELECTRON DISTRIBUTIONS IN SELECTIVELY-DOPED GAAS/N-ALGAAS [J].
INOUE, M ;
INAYAMA, M ;
HIYAMIZU, S ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L213-L215
[7]  
INOUE T, 1983, JPN J APPL PHYS S221, V22, P357
[8]  
MATSUMOTO K, 1984, INT C SOLID STATE DE, P363
[9]   ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].
MIMURA, T ;
HIYAMIZU, S ;
JOSHIN, K ;
HIKOSAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319
[10]   HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].
MIMURA, T ;
JOSHIN, K ;
HIYAMIZU, S ;
HIKOSAKA, K ;
ABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600