SEMI-EMPIRICAL EQUATIONS FOR ELECTRON VELOCITY IN SILICON .2. MOS INVERSION LAYER

[21] Sabnis A. G., 1981, International Electron Devices Meeting, P244

[22] SABNIS AG, 1979, IEDM TECH DIG, P18

[23] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &

[24] OBSERVATION OF MOBILITY ANISOTROPY OF ELECTRONS ON (110) SILICON SURFACES AT LOW-TEMPERATURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (01): : 153 - &

[25] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[26] SEMI-EMPIRICAL EQUATIONS FOR ELECTRON VELOCITY IN SILICON .1. BULK [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1629 - 1633

[27] MOBILITY DEGRADATION DUE TO THE GATE FIELD IN THE INVERSION LAYER OF MOSFETS - COMMENT [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (01) : 11 - 12

[28] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[29] Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499

[30] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[21] Sabnis A. G., 1981, International Electron Devices Meeting, P244

[22] SABNIS AG, 1979, IEDM TECH DIG, P18

[23] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &

[24] OBSERVATION OF MOBILITY ANISOTROPY OF ELECTRONS ON (110) SILICON SURFACES AT LOW-TEMPERATURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (01): : 153 - &

[25] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[26] SEMI-EMPIRICAL EQUATIONS FOR ELECTRON VELOCITY IN SILICON .1. BULK [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1629 - 1633

[27] MOBILITY DEGRADATION DUE TO THE GATE FIELD IN THE INVERSION LAYER OF MOSFETS - COMMENT [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (01) : 11 - 12

[28] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[29] Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499

[30] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508