X-RAY-SCATTERING STUDY OF AG/SI(111) BURIED INTERFACE STRUCTURES

被引:53
作者
HONG, HW
ABURANO, RD
LIN, DS
CHEN, HD
CHIANG, TC
ZSCHACK, P
SPECHT, ED
机构
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[3] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831
关键词
D O I
10.1103/PhysRevLett.68.507
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7 x 7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250-degrees-C the interface becomes (1 x 1). This is contrasted by the (square-root 3 x square-root 3)R30-degrees structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (square-root 3 x square-root 3)R30-degrees Ag/Si(111) surface at room temperature, the (square-root 3 x square-root 3)R30-degrees reconstruction is suppressed.
引用
收藏
页码:507 / 510
页数:4
相关论文
共 15 条
  • [11] VENABLES JA, 1980, SURF SCI, V95, P441
  • [12] VILEG E, 1989, SURF SCI, V209, P100
  • [13] OBSERVATION OF FILM STATES AND SURFACE-STATE PRECURSORS FOR AG FILMS ON SI(111)
    WACHS, AL
    SHAPIRO, AP
    HSIEH, TC
    CHIANG, TC
    [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1460 - 1463
  • [14] EVIDENCE FOR GERMANIUM SEGREGATION ON THIN-FILMS OF AG ON GE(111)
    WACHS, AL
    MILLER, T
    CHIANG, TC
    [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8870 - 8873
  • [15] PHOTOEMISSION-STUDIES OF THE INITIAL ADSORPTION AND GROWTH OF AG ANDAU ON GE AND SI
    WACHS, AL
    MILLER, T
    SHAPIRO, AP
    CHIANG, TC
    [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5514 - 5523