X-RAY-SCATTERING STUDY OF AG/SI(111) BURIED INTERFACE STRUCTURES

被引：53

作者：

HONG, HW

ABURANO, RD

LIN, DS

CHEN, HD

CHIANG, TC

ZSCHACK, P

SPECHT, ED

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[3] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.68.507

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7 x 7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250-degrees-C the interface becomes (1 x 1). This is contrasted by the (square-root 3 x square-root 3)R30-degrees structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (square-root 3 x square-root 3)R30-degrees Ag/Si(111) surface at room temperature, the (square-root 3 x square-root 3)R30-degrees reconstruction is suppressed.

引用

页码：507 / 510

页数：4

共 15 条

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