INSTABILITY OF MOSFET DUE TO REDISTRIBUTION OF OXIDE CHARGES

[1] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 619 - +

[5] AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 980 - +

[6] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[7] LINDENBERGER WS, COMMUNICATION

[8] METZ ED, 1963, PHYS FAIL ELECTRON, V2, P163

[9] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 268 - 275

[1] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 619 - +

[5] AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 980 - +

[6] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[7] LINDENBERGER WS, COMMUNICATION

[8] METZ ED, 1963, PHYS FAIL ELECTRON, V2, P163

[9] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 268 - 275