INSTABILITY OF MOSFET DUE TO REDISTRIBUTION OF OXIDE CHARGES

[11] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[12] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[13] Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948

[14] SZE SM, 1981, PHYSICS SEMICONDUCTO

[15] DRIFT OF BREAKDOWN VOLTAGE IN P-N-JUNCTIONS IN SILICON (WALK-OUT) [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 689 - 695

[11] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[12] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[13] Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948

[14] SZE SM, 1981, PHYSICS SEMICONDUCTO

[15] DRIFT OF BREAKDOWN VOLTAGE IN P-N-JUNCTIONS IN SILICON (WALK-OUT) [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 689 - 695