DRIFT OF BREAKDOWN VOLTAGE IN P-N-JUNCTIONS IN SILICON (WALK-OUT)

被引：20

作者：

VERWEY, JF ^{[1
]}

HERINGA, A ^{[1
]}

DEWERDT, R ^{[1
]}

HOFSTAD, WVD ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 08期

关键词：

D O I：

10.1016/0038-1101(77)90045-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：689 / 695

页数：7

相关论文

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