TIME-RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF GAAS AND ALGAAS ON SI SUBSTRATE GROWN BY MOCVD

被引：3

作者：

SOGA, T

UEHIRO, M

AZUMA, Y

YANG, M

JIMBO, T

UMENO, M

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

[2] NAGOYA INST TECHNOL,MICROSTRUCT DEVICES RES CTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90125-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaAs layers and AlGaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed, The minority carrier lifetime is increased with increasing growth temperature and by using SLS + TCA. The longest minority carrier lifetime of GaAs on Si obtained in this study is 0.50 ns.

引用

页码：75 / 81

页数：7

共 9 条

[1] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON [J].