CORRELATION OF PHOTOELECTRIC PROPERTIES OF A-SI-H IMAGE SENSOR WITH COMPOSITIONAL DISTRIBUTION OF SI3N4 BLOCKING INTERFACE

被引：3

作者：

KANEKO, S

OKUMURA, F

UCHIDA, H

KANAMORI, M

SAKAMOTO, M

ITANO, T

KAJIWARA, U

SAITO, T

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(83)90390-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1227 / 1230

页数：4

共 6 条

[1] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING
BAIXERAS, J
MENCARAGLIA, D
ANDRO, P
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407
[2] Kaneko S., 1982, International Electron Devices Meeting. Technical Digest, P328
[3] Komiya K., 1981, International Electron Devices Meeting, P309
[4] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
KURATA, H
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
[5] ALPHA-SI-H IN ELECTROPHOTOGRAPHY AND VIDICON DEVICES
SHIMIZU, I
ODA, S
SAITO, K
TOMITA, H
INOUE, E
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1123 - 1130
[6] PROPERTIES OF AMORPHOUS FILMS PREPARED FROM SIH4-N2-H2 GAS-MIXTURE
WATANABE, H
KATOH, K
YASUI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L341 - L343