PROPERTIES OF AMORPHOUS FILMS PREPARED FROM SIH4-N2-H2 GAS-MIXTURE

被引:39
作者
WATANABE, H [1 ]
KATOH, K [1 ]
YASUI, M [1 ]
机构
[1] STANLEY ELECT CO LTD,RES & DEV LAB,MIDORI KU,YOKOHAMA 227,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 06期
关键词
D O I
10.1143/JJAP.21.L341
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L341 / L343
页数:3
相关论文
共 10 条
[1]   TRANSPORT-PROPERTIES OF A-SI - H ALLOYS PREPARED BY RF SPUTTERING-I [J].
ANDERSON, DA ;
PAUL, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (02) :187-213
[2]   ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING [J].
BAIXERAS, J ;
MENCARAGLIA, D ;
ANDRO, P .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03) :403-407
[3]   HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].
FANG, CJ ;
GRUNTZ, KJ ;
LEY, L ;
CARDONA, M ;
DEMOND, FJ ;
MULLER, G ;
KALBITZER, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260
[4]   WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J].
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L811-L813
[5]   EFFECT OF NITROGEN DOPING ON GLOW-DISCHARGE AMORPHOUS-SILICON FILMS [J].
PIETRUSZKO, SM ;
NARASIMHAN, KL ;
GUHA, S .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02) :357-363
[6]   INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].
SHANKS, H ;
FANG, CJ ;
LEY, L ;
CARDONA, M ;
DEMOND, FJ ;
KALBITZER, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :43-56
[7]   PHOTORECEPTOR OF A-SI-H WITH DIODE-LIKE STRUCTURE FOR ELECTROPHOTOGRAPHY [J].
SHIMIZU, I ;
SHIRAI, S ;
INOUE, E .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2776-2781
[8]   ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].
SPEAR, WE ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949
[9]   FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON [J].
YADAV, AD ;
JOSHI, MC .
THIN SOLID FILMS, 1979, 59 (03) :313-317
[10]   ELECTROPHOTOGRAPHIC PROPERTIES OF RF GLOW DISCHARGE-PRODUCED AMORPHOUS SI-H FILM [J].
YAMAMOTO, N ;
NAKAYAMA, Y ;
WAKITA, K ;
NAKANO, M ;
KAWAMURA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :305-310