EFFECT OF NITROGEN DOPING ON GLOW-DISCHARGE AMORPHOUS-SILICON FILMS

被引：20

作者：

PIETRUSZKO, SM

NARASIMHAN, KL

GUHA, S

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 02期

关键词：

D O I：

10.1080/13642818108221905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 363

页数：7

共 16 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING
BAIXERAS, J
MENCARAGLIA, D
ANDRO, P
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407
[3] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4] EFFECT OF HYDROGEN CONTENT ON THE PHOTO-VOLTAIC PROPERTIES OF AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
TRIANO, AR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 688 - 691
[5] CARLSON DE, 1979, AMORPHOUS SEMICONDUC, P311
[6] MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION
GRIFFITH, RW
KAMPAS, FJ
VANIER, PE
HIRSCH, MD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 391 - 396
[7] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON
JONES, DI
GIBSON, RA
LECOMBER, PG
SPEAR, WE
[J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 93 - 106
[8] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[9] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING
PAUL, W
LEWIS, AJ
CONNELL, GAN
MOUSTAKAS, TD
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972
[10] Rose A, 1963, CONCEPTS PHOTOCONDUC

← 1 2 →