SOME CHARACTERISTICS OF LITHIUM-DRIFTED SILICON STRUCTURES

被引：1

作者：

BAILY, NA

AKUTAGAWA, WM

ANDRES, RJ

MONTANO, HL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 10期

关键词：

D O I：

10.1063/1.1709039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3907 / +

页数：1

共 10 条

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[6] CHARACTERISTICS OF P-I-N JUNCTIONS PRODUCED BY ION-DRIFT TECHNIQUES IN SILICON [J].

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[10] ION DRIFT IN AN N-P JUNCTION [J].

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