RETENTION AND THERMAL RELEASE OF DEUTERIUM IMPLANTED IN BERYLLIUM

Beryllium was implanted at room temperature with deuterium at 500 and 1500 ev while the amount of D retained was measured as a function of incident fluence using nuclear reaction analysis. At low fluences almost all of the incident D is retained but at high fluences the retention saturates. The retention is well described by a saturation model using a saturation concentration of 0. 31 plus or minus . 05 D/Be and D depth profiles calculated by the TRIM code. Isochronal annealing of implanted samples shows that the D is thermally released in two stages, a broad stage at 400 plus or minus 100 degree C and a stage at 125 degree C. For samples implanted to saturation most of the D is released in the 125 degree C stage but no release occurs at this temperature for low dose implants.