A SELF-CONSISTENT MODEL OF THE LATERAL BEHAVIOR OF A TWIN-STRIPE INJECTION-LASER

被引：19

作者：

KUMAR, T ^{[1
]}

ORMONDROYD, RF ^{[1
]}

ROZZI, TE ^{[1
]}

机构：

[1] UNIV BATH,SCH ELECT ENGN,BATH BA2 7AY,AVON,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 10期

关键词：

D O I：

10.1109/JQE.1986.1072905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1975 / 1985

页数：11

共 34 条

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[7] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

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[8] MODE GAIN AND JUNCTION CURRENT IN GAAS UNDER LASING CONDITIONS [J].

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[9] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].

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[10] CARRIER TRANSPORT IN DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS [J].

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